K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.
8V power supply, 1.
8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • Deep Power Down Mode www.
DataSheet4U.
com • All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
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