SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB7D0N65P1/F1
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KHB7D0N65P1
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
A
O C F
E
G B Q
I
FEATURES
VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.
4 @VGS=10V
K M L J D N N
P
Qg(typ.
)= 32nC
com
H
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive A...