MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron MOSFET Line
RF Power Field Effect
Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.
• Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 25 Watts Avg.
Power Gain — 17.
8 dB Efficiency — 25% Adjacent Channel Power — 750 kHz: –47 dBc @ 30 kHz BW • Internal...