Freescale Semiconductor Technical Data
Document Number: MRF5S9070NR1 Rev.
6, 5/2006
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg.
, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 17.
8 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth • Cap...