Freescale Semiconductor Technical Data
Document Number: MRF5S9080N Rev.
1, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz.
Suitable for TDMA, CDMA, and multicarrier amplifier applications.
GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
Power Gain — 18.
5 dB Drain Efficiency — 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg.
, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
Power Gain — 19 dB www.
D...