Freescale Semiconductor Technical Data
Document Number: MRF5S9101N Rev.
4, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz.
Suitable for multicarrier amplifier applications.
GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.
5 dB Drain Efficiency - 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg.
, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 18 dB Spectral Regrowth @ ...