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1N5709B

ABRUPT VARACTOR DIODE

Description

1N5709B ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7 DESCRIPTION: The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose www.DataSheet4U.com applications. MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W NONE CHARACTERISTICS SYMBOL VBR IR CT CT4/CT60 Q IR = 10 µA VR = 60 V ...

Advanced Semiconductor

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