PHB23NQ10LT
N-channel TrenchMOS logic level FET
Rev.
01 — 11 July 2006 Product data sheet
1.
Product profile
1.
1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features
com
s Logic level threshold s Fast switching
s TrenchMOS technology
1.
3 Applications
s DC-to-DC converters s Switched-mode power supplies s General purpose switching
1.
4 Quick reference data
s VDS ≤ 100 V s RDSon ≤ 72 mΩ s ID ≤ 23 A s QGD = 9.
3 nC (typ)
2.
Pinning information
Table 1.
Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
mbb076
Simplified outline
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