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PBSS305PD
100 V, 2 A
PNP low VCEsat (BISS)
transistor
Rev.
01 — 30 May 2006 Product data sheet
1.
Product profile
1.
1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305ND.
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2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.
3 Applications
I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate dri...