NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features com • • • • Low RDS(on) High Current Capability Low Gate Charge These are Pb−Free Devices V(BR)DSS 40 V http://onsemi.
com Applications RDS(ON) TYP 21 mΩ @ 10 V ID MAX (Note 1) 38 A • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current − RqJC (Note 1) Power Dissipation − RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 ±20 38 27 75 75 −55 to 175 36 150 W Units V...

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