Part Number
|
IXFL38N100Q2 |
Manufacturer
|
IXYS |
Description
|
HiPerFET Power MOSFET |
Published
|
Jun 11, 2010 |
Detailed Description
|
IXFL 38N100Q2
HiPerFETTM Power MOSFETs
IXFL 38N100Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsi...
|
Datasheet
|
IXFL38N100Q2
|
Overview
IXFL 38N100Q2
HiPerFETTM Power MOSFETs
IXFL 38N100Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr
VDSS ID25 RDS(on) trr
= 1000 = 22 = 0.
28 ≤ 300
com
V A Ω ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, VGS = 0 V TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 22 152 38 60 5.
0 20 380 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V...
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