Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 64 A ≤ 96 mΩ ≤ 200 ns com Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 64 150 64 80 3.
5 20 1040 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns TO-264 AA (IXFK) G D S (TAB)...

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