Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 48N60P ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 32 A ≤ 160 mΩ ≤ 250 ns www.
DataSheet4U.
com (Electrically Isolated Back Surface) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 32 110 32 70 2.
0 20 300 -55 .
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+150 150 -55 .
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+150 300 2500 20.
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120 / 4.
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26 5 V V V V G ISOPLUS2...

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