PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD) PLUS220...

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