PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.
7 Ω Symbol V DSS E VDGR VGSS VGSM T ID25 IDM IAR EAR E EAS dv/dt L PD TJ TJM O Tstg T L TSOLD Md S Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 B Symbol Test Conditions (TJ = 25°C, unless otherwise specified) O BVDSS VGS = 0 V, ID = 250 μA Maximum Ratings 6...

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