DATA SHEET
SILICON
TRANSISTOR
2SD596A
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AUDIO FREQUENCY POWER AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR MINI MOLD
FEATURES
• Complementary to NEC 2SB624
PNP Transistor.
• High DC Current Gain: hFE = 200 TYP.
(VCE = 1.
0 V, IC = 100 mA)
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range VCBO 30 V VCEO 25 V VEBO 5.
0 V IC 700 mA PT 200 mW Tj 150 °C Tstg −55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain C...