com FLL400IK-2C High Voltage - High Power GaAs FET FEATURES •E High Output Power: P1dB=46.
0dBm(Typ.
) •E High Gain: G1dB=13.
0dB(Typ.
) •E High PAE: ηadd=45%(Typ.
) •E Broad Band: 2.
11~2.
17GHz •E Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot T stg T ch 15 -5 100 -65 t...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)