PBSS302ND
40 V
NPN low VCEsat (BISS)
transistor
Rev.
01 — 19 April 2005
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Product data sheet
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Product profile
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1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS)
transistor in a SOT457 (SC-74) SMD plastic package.
PNP complement: PBSS302PD.
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2 Features
s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation
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3 Applications
s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.
g.
motors, fans) Thin Film Transist...