com PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(on) = 600 V = 22 A ≤ 330 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 400 -55 .
.
.
+150 150 -55 .
.
.
+150 300 250 W °C °C °C °C °C Maximum Ratings 600 600 ± 20 ± 30 22 66 22 40 1...

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