Part Number
|
IXFK69N30P |
Manufacturer
|
IXYS |
Description
|
PolarHT HiPerFET Power MOSFET |
Published
|
Jun 17, 2010 |
Detailed Description
|
PolarHT HiPerFET Power MOSFET
TM
IXFH69N30P IXFK69N30P
N-Channel Enhancement Mode Fast Intrinsic Diode
RDS(on) trr
V...
|
Datasheet
|
IXFK69N30P
|
Overview
PolarHT HiPerFET Power MOSFET
TM
IXFH69N30P IXFK69N30P
N-Channel Enhancement Mode Fast Intrinsic Diode
RDS(on) trr
VDSS ID25
= 300 V = 69 A = 49 mΩ ≤ 200 ns
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DataSheet4U.
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Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 69 200 69 50 1.
5 10 500 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C
TO-247 (IXFH)
G
D (TAB) D S
TO-264 (IXFK)
G
D
D (TAB) S D = Drai...
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