BLF6G22-45
Power LDMOS
transistor
Rev.
02 — 21 April 2008
com
Product data sheet
1.
Product profile
1.
1 General description
45 W LDMOS power
transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 2.
5
Gp (dB) 18.
5
ηD (%) 13
ACPR (dBc) −49[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should...