BLF6G22LS-130
Power LDMOS
transistor
Rev.
01 — 23 May 2008
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Product data sheet
1.
Product profile
1.
1 General description
130 W LDMOS power
transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 30
Gp (dB) 17
ηD (%) 28.
5
IMD3 (dBc) −37[1]
ACPR (dBc) −40[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Th...