BUK75/76/7E11-55B
TrenchMOS™ standard level FET
Rev.
02 — 11 November 2003
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Product data
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Product profile
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1 Description
N-channel enhancement mode field-effect power
transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
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2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible.
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3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching.
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4 Quick reference data
s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 9.
9 mΩ (typ) s Ptot ≤ 157 W.
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Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, and SOT...