Part Number
|
IXFV52N30P |
Manufacturer
|
IXYS |
Description
|
PolarHT HiPerFET Power MOSFET |
Published
|
Jun 19, 2010 |
Detailed Description
|
Advanced Technical Information
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode...
|
Datasheet
|
IXFV52N30P
|
Overview
Advanced Technical Information
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode
IXFH 52N30P IXFV 52N30P IXFV 52N30PS
VDSS ID25 trr
RDS(on)
com = 300 V = 52 A ≤ 66 mΩ ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transinet TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 52 150 52 30 1.
0 10 400 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb
TO-247...
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