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PHD110NQ03LT
N-channel TrenchMOS™ logic level FET
Rev.
01 — 16 June 2004
M3D300
Product data
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Product profile
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1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
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2 Features
s Logic level threshold s Low on-state resistance s Low gate charge s Surface mount package.
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3 Applications
s Control FET in DC-to-DC converters s Switched-mode power supplies.
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4 Quick reference data
s VDS ≤ 25 V s Ptot ≤ 115 W s ID ≤ 75 A s RDSon ≤ 4.
6 mΩ.
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Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to d...