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PBSS4330PA
30 V, 3 A
NPN low VCEsat (BISS)
transistor
Rev.
01 — 19 April 2010 Product data sheet
1.
Product profile
1.
1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP complement: PBSS5330PA.
1.
2 Features and benefits
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package wi...