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BLF7G22L-250P; BLF7G22LS-250P
Power LDMOS
transistor
Rev.
01 — 6 May 2010 Objective data sheet
1.
Product profile
1.
1 General description
250 W LDMOS power
transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
IDq (mA) 1900
VDS (V) 28
PL(AV) (W) 70
Gp (dB) 18
ηD (%) 30
ACPR (dBc) −28[1]
Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits
Excellent ruggedness High efficiency ...