www.
DataSheet4U.
com
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
Rev.
01 — 17 May 2010 Objective data sheet
1.
Product profile
1.
1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.
3 Applications
12 V Automotive systems Electric and electro-hydraulic power ste...