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BUK663R5-30C
N-channel TrenchMOS intermediate level FET
Rev.
01 — 21 May 2010 Objective data sheet
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Product profile
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1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
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2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
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3 Applications
12 V Automotive systems Electric and electro-hydraulic power ste...