com FDME1023PZT Dual P-Channel PowerTrench®MOSFET December 2009 FDME1023PZT Dual P-Channel PowerTrench® MOSFET -20 V, -2.
3 A, 142 mΩ Features „ Max rDS(on) = 142 mΩ at VGS = -4.
5 V, ID = -2.
3 A „ Max rDS(on) = 213 mΩ at VGS = -2.
5 V, ID = -1.
8 A „ Max rDS(on) = 331 mΩ at VGS = -1.
8 V, ID = -1.
5 A „ Max rDS(on) = 530 mΩ at VGS = -1.
5 V, ID = -1.
2 A „ Low profile: 0.
55 mm maximum in the new package MicroFET 1.
6x1.
6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level 1600V (Note3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for the battery charges switch in cellular handset and oth...

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