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DataSheet4U.
com FDME1024NZT Dual N-Channel Power Trench® MOSFET December 2009 FDME1024NZT Dual N-Channel Power Trench® MOSFET 20 V, 3.
4 A, 66 mΩ Features „ Max rDS(on) = 66 mΩ at VGS = 4.
5 V, ID = 3.
4 A „ Max rDS(on) = 86 mΩ at VGS = 2.
5 V, ID = 2.
9 A „ Max rDS(on) = 113 mΩ at VGS = 1.
8 V, ID = 2.
5 A „ Max rDS(on) = 160 mΩ at VGS = 1.
5 V, ID = 2.
1 A „ Low profile: 0.
55 mm maximum in the new package MicroFET 1.
6x1.
6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level 1600V (Note3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultrapo...

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