Part Number
|
NDF02N60Z |
Manufacturer
|
ON Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Jun 30, 2010 |
Detailed Description
|
NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET 600 V, 4.8 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Pro...
|
Datasheet
|
NDF02N60Z
|
Overview
NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET 600 V, 4.
8 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF
NDD Unit
Drain−to−Source Voltage
Continuous (Note 1)
Drain
Current
RqJC
VDSS ID
600 2.
4 2.
2
V A
Continuous TA = 100°C
Drain Current (Note 1)
RqJC
Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 2.
4 A
ESD (HBM) (JESD 22−A114)
ID
IDM PD VGS EAS
Vesd
1.
6 1.
4 A
10 24
±30 120
9 57
A W V mJ
2500
V
RMS Is...
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