NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.
6 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF NDD Unit Drain−to−Source Voltage Continuous Drain Current RqJC VDSS 600 V ID 3.
1 2.
6 A (Note 1) Continuous Drain Current RqJC TA = 100°C ID 2.
9 1.
65 A (Note 1) Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 3.
0 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.
3 sec.
, R.
H.
≤ 30%, TA = 25°C) (Figure ...

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