Freescale Semiconductor Technical Data
Document Number: MRF8S26060H www.
DataSheet4U.
com Rev.
0, 4/2010
RF Power Field Effect
Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.
5 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 16.
3 16.
3 16.
3 hD (%) 33.
2 33.
0 32.
9 Output PAR (dB) 6.
3 6.
3 6.
2 ACPR (dBc) -37...