com
NTMFS4897NF Power MOSFET
Features
30 V, 171 A, Single N−Channel, SO−8 FL
• • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes
Schottky Diode Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device
http://onsemi.
com
Applications
V(BR)DSS 30 V
RDS(ON) MAX 2.
0 mW @ 10 V 3.
0 mW @ 4.
5 V
ID MAX 171 A
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t ...