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Part Number
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IXFX230N20T |
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Manufacturer
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IXYS |
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Description
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GigaMOS Power MOSFET |
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Published
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Jul 5, 2010 |
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Detailed Description
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Advance Technical Information
www.DataSheet4U.com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fa...
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Datasheet
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IXFX230N20T
|
Overview
Advance Technical Information
www.
DataSheet4U.
com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK230N20T IXFX230N20T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
200V 230A 7.
5mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 200 200 ± 20 ± 30 230 160 630 100 3 20 1670 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
N/lb...
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