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Part Number
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IXFX240N15T2 |
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Manufacturer
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IXYS |
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Description
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GigaMOS TrenchT2 HiperFET Power MOSFET |
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Published
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Jul 5, 2010 |
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Detailed Description
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Advance Technical Information
com
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mod...
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Datasheet
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IXFX240N15T2
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Overview
Advance Technical Information
com
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK240N15T2 IXFX240N15T2
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
150V 240A 5.
2mΩ 140ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 150 150 ± 20 ± 30 240 160 600 120 2 1250 20 -55 .
.
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+175 175 -55 .
.
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+175 V V V V A A A ...
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