Part Number
|
IXFK260N17T |
Manufacturer
|
IXYS |
Description
|
GigaMOS Power MOSFET |
Published
|
Jul 5, 2010 |
Detailed Description
|
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fa...
|
Datasheet
|
IXFK260N17T
|
Overview
Advance Technical Information
www.
DataSheet4U.
com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK260N17T IXFX260N17T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
170V 260A 6.
5mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 170 170 ± 20 ± 30 260 160 700 100 3 1670 20 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.
in.
N/lb...
Similar Datasheet