Part Number
|
IXFX320N17T2 |
Manufacturer
|
IXYS |
Description
|
GigaMOS TrenchT2 HiperFET Power MOSFET |
Published
|
Jul 5, 2010 |
Detailed Description
|
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mod...
|
Datasheet
|
IXFX320N17T2
|
Overview
Advance Technical Information
www.
DataSheet4U.
com
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK320N17T2 IXFX320N17T2
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
170V 320A 5.
2mΩ 150ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 170 170 ± 20 ± 30 320 160 800 100 5 1670 20 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A ...
Similar Datasheet