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Part Number
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IXFN240N15T2 |
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Manufacturer
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IXYS |
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Description
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GigaMOS TrenchT2 HiperFET Power MOSFET |
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Published
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Jul 5, 2010 |
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Detailed Description
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Advance Technical Information
www.DataSheet4U.com
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mod...
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Datasheet
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IXFN240N15T2
|
Overview
Advance Technical Information
www.
DataSheet4U.
com
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN240N15T2
RDS(on) ≤ ≤ trr
VDSS ID25
= =
150V 240A 5.
2mΩ 140ns
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 150 150 ±20 ±30 240 200 600 120 2 20 830 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A ...
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