Part Number
|
IXGH48N60B3C1 |
Manufacturer
|
IXYS |
Description
|
GenX3 600V IGBT w/ SiC Anti-Parallel Diode |
Published
|
Jul 5, 2010 |
Detailed Description
|
Preliminary Technical Information
com
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGH48N60B3C1
VCE...
|
Datasheet
|
IXGH48N60B3C1
|
Overview
Preliminary Technical Information
com
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGH48N60B3C1
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
600V 48A 1.
8V 116ns
Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching
TO-247
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 48 20 280 ICM = 120 @ ≤ VCES 300 -55 .
.
.
+150 150 -55 .
.
.
+150 W °C °C °C °C °C Nm/lb.
in.
g V V V V A A A A A Fea...
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