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AOB436 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications).
AOB436L is a Green Product ordering option.
AOB436 and AOB436L are electrically identical.
TO-263 D2-PAK
Features
VDS (V) = 25V ID = 55A (VGS = 10V) RDS(ON) 7 mΩ (VGS = 10V) RDS(ON) 11 mΩ (VGS = 4.
5V) 193 18
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Sym...