NEW PRODUCT DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) 3.
0Ω @ VGS= 4.
5V 6.
0Ω @ VGS= 1.
8V ID TA = +25°C 240mA 180mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications  DC-DC Converters  Power Management Functions Features  Dual N-Channel MOSFET  Low On-Resistance:  3.
0Ω@ 4.
5V  4.
0Ω@ 2.
5V  6.
0Ω@1.
8V  10Ω@1.
5V  Very Low Gate Threshold Voltage, 1.
05V Max  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package  ESD Protected Gate (...

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