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BLF7G20L-200; BLF7G20LS-200
Power LDMOS
transistor
Rev.
01 — 3 June 2010 Objective data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 1805 to 1880
IDq (mA) 1620
VDS (V) 28
PL(AV) (W) 55
Gp (dB) 18
ηD (%) 33
ACPR (dBc) −29[1]
Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits
Excellent ruggedness High efficiency Low...