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com PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 200V RDS(on) max 0.
023Ω ID 98A† Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) Fully Characterized Avalanche Voltage and Current Super-220™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt...

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