TPC8116-H com
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8116-H
High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
• • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.
7 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 24mΩ (typ.
) High forward transfer admittance: |Yfs| =14 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −40 V) Enhancement mode: Vth =−0.
8 to−2.
0 V (VDS =−10 V, ID =−1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS...