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TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III)
TPC8022-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications
z Small footprint due to a small and thin package z High speed switching z Small gate charge : QSW = 3.
5 nC (typ.
) z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.
) z High forward transfer admittance: |Yfs| = 15 S (typ.
) z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate v...