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TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8021-H
High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications
6.
0±0.
3 0.
5±0.
1 8 1.
27 0.
4±0.
1 5
Unit: mm
0.
05 M A
• • • • • • •
Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.
9nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 6.
8 mΩ (typ.
) High forward transfer admittance: |Yfs| =46 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA)
5.
0±0.
2
0.
15±0.
05
1 5.
0±0.
2 0.
95±0.
05
4
0.
595 A 0.
166±0.
05
S 1...