TPC8213-H www.
DataSheet4U.
com
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8213-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
• • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.
9 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 40 mΩ (typ.
) High forward transfer admittance: |Yfs| =11 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source...