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TPCF8103
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8103
Notebook PC Applications Portable Equipment Applications
• • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.
) High forward transfer admittance: |Yfs| = 4.
7S (typ.
) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement-model: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -200μA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -...